Foundry Development of System-On-Chip InP-Based Photonic Integrated Circuits
نویسندگان
چکیده
منابع مشابه
High-speed photodiodes for InP-based photonic integrated circuits.
We demonstrate the feasibility of monolithic integration of evanescently coupled Uni-Traveling Carrier Photodiodes (UTC-PDs) having a bandwidth exceeding 100 GHz with Multimode Interference (MMI) couplers. This platform is suitable for active-passive, butt-joint monolithic integration with various Multiple Quantum Well (MQW) devices for narrow linewidth millimeter-wave photomixing sources. The ...
متن کاملAll-Optical Regeneration Using InP-Based Photonic Integrated Circuits
During the last years we have pioneered several new concepts for 2R optical regeneration. Two of these concepts, an active 2x2 multi mode interference (MMI) coupler and a Mach Zehnder interferometer with a regular semiconductor optical amplifier in one arm and an active 1x1 MMI in the other arm, have been fabricated as photonic integrated circuits. A third regenerator, a MachZehnder interferome...
متن کاملInP-Based Monolithic Photonic Integrated Devices
We present our recent work on monolithically integrated devices comprising a variety of functional elements such as high speed optical transmitters and receivers, electro-absorption modulators integrated with tunable dispersion compensators and fast-tunable wavelength converters. key words: photonic integration, wavelength converter, high speed modulator and receiver, advanced modulation format
متن کامل2 μm wavelength range InP-based type-II quantum well photodiodes heterogeneously integrated on silicon photonic integrated circuits.
The heterogeneous integration of InP-based type-II quantum well photodiodes on silicon photonic integrated circuits for the 2 µm wavelength range is presented. A responsivity of 1.2 A/W at a wavelength of 2.32 µm and 0.6 A/W at 2.4 µm wavelength is demonstrated. The photodiodes have a dark current of 12 nA at -0.5 V at room temperature. The absorbing active region of the integrated photodiodes ...
متن کاملManufacturing Progress for InP-based 500 Gb/s Photonic Integrated Circuits
The status and progress of InP photonic integration is reviewed. Infinera has previously reported on the manufacturing of 100 Gb/s InP-based large-scale photonic integrated circuits. These PICs, based on amplitude modulation and with more than 50 discrete functions per chip, have now reached a high level of manufacturing maturity, and have furthermore redefined reliability standards for InP com...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: IEEE Journal of Selected Topics in Quantum Electronics
سال: 2019
ISSN: 1077-260X,1558-4542
DOI: 10.1109/jstqe.2019.2906270